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NPT2021 - Next generation high power RF semiconductor technology

NPT2021_9025328.PDF Datasheet


 Full text search : Next generation high power RF semiconductor technology


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APT100GF60JRD The Fast IGBTis a new generation of high voltage power IGBTs. ⑩的快速IGBT是一种高压IGBT的新一代
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Fast IGBT & FRED 600V 140A
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
APT33GF120B2RD APT33GF120LRD Fast IGBT & FRED 1200V 52A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBTis a new generation of high voltage power IGBTs.
Advanced Power Technology Ltd.
APT5014BLL APT5014SLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗,高电压,N沟道增强模式的新一代功率MOSFET
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS 7 500V 35A 0.140 Ohm
Advanced Power Technology, Ltd.
APT30GT60CR The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 30A
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
APT20GT60AR The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 30A
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
APT10035B2FLL APT10035LFLL POWER MOS 7 1000V 28A 0.350 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-19 RoHS Compliant: No
Advanced Power Technology Ltd.
APT10045B2FLL APT10045LFLL MGrid IDT Rec W/SglLRmp .76AuLF 10Ckt
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 23A 0.450 Ohm
Advanced Power Technology Ltd.
APT6013B2FLL APT6013LFLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 43A 0.130 Ohm
Advanced Power Technology, Ltd.
APT10043 APT10043JVR    Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 1000V 22A 0.430 Ohm
Advanced Power Technolo...
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
APT10021JFLL POWER MOS 7 1000V 37A 0.210 Ohm
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7 is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Advanced Power Technology Ltd.
APT30M30JLL POWER MOS 7 300V 88A 0.030 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Advanced Power Technology Ltd.
APT10078BFLL APT10078SFLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 14A 0.780 Ohm
Advanced Power Technology Ltd.
 
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